Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2011-05-31
2011-05-31
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S734000, C257SE21214
Reexamination Certificate
active
07951721
ABSTRACT:
There is described a method for creating a thermally-isolated microstructure on a slab of mono-crystalline silicon which uses a hybrid dry-then-wet etch technique that when controlled, can produce microstructures without any silicon adhering underneath, microstructures having small masses of silicon adhering underneath, and microstructures that are still attached to the slab of mono-crystalline silicon via a waisted silicon body. When creating the microstructures with a waisted silicon body, the thermal isolation of the microstructure can be designed by controlling the depth of the etching and the size of the waist.
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Grudin Oleg
Landsberger Leslie M.
Schwarz Uwe
Urban Jens
Chen Jack
Ogilvy Renault LLP
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