EL semiconductor device

Details EL semiconductor device EL semiconductor device

2011-03-01

2011-03-01

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07899104

ABSTRACT:
An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

REFERENCES:
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patent: 2007-073606 (2007-03-01), None
patent: 2007-251092 (2007-09-01), None
E. Kato at al., “Significant progress in II-VI blue-green laser diode lifetime”, Electronics Lett., 34, (1998), p. 282.
N. Dai et al., “Molecular beam epitaxial growth of high quality Zn1-xCdxSe on InP substrates”, Appl. Phys. Lett., 66, (1995), p. 2742.
T. Morita et al., “Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates”, J. Electron. Mater., 25, (1996) p. 425.

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