Optical inspection including partial scanning of wafers

Details Optical inspection including partial scanning of wafers Optical inspection including partial scanning of wafers

2011-04-12

2011-04-12

Toatley, Gregory J (Department: 2877)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C382S144000

Reexamination Certificate

active

07924420

ABSTRACT:
Inspection of objects, such as semiconductor wafers, can be performed using a diluted scan wherein not all of an inspected area is actually imaged. Instead, a dilution plan can be devised based on the desired amount of area to be skipped and the particular parameters of the inspection, such as the size of each unit area to be imaged or not imaged and the distribution features of the wafer. When the same area is inspected in multiple wafers, the wafers can be inspected in sets using a dilution plan whereby a wafer (or inspected area) can be statistically inspected using diluted scans of the set of wafers. Similarly a die or group of dies of a specified type can be statistically inspected using diluted scans of a set of dies (or group of dies). When statistical inspection is used, the end results of such inspections, such as defect densities and distributions, can be corrected to account for inaccuracies that may be introduced when certain portions are imaged more often than others due to the dilution plan.

REFERENCES:
patent: 2005/0195389 (2005-09-01), Noy et al.
patent: 2006/0279729 (2006-12-01), Heiden et al.
patent: 2007/0038325 (2007-02-01), Guldi et al.
U.S. Appl. No. 10/345,097, filed Jan. 15, 2003, Furman et al.

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