Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-01-04
2011-01-04
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S642000, C257S759000, C257S760000, C257SE23142, C257SE23145
Reexamination Certificate
active
07863745
ABSTRACT:
A semiconductor device, including a semiconductor substrate where a plurality of functional elements is formed; and a multilayer interconnection layer provided over the semiconductor substrate, the multilayer interconnection layer including a wiring layer mutually connecting the plural functional elements and including an interlayer insulation layer, wherein a region where the wiring layer is formed is surrounded by a groove forming part, the groove forming part piercing the multilayer interconnection layer; and the groove forming part is filled with an organic insulation material.
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Japanese Office Action dated Oct. 19, 2010, issued in corresponding Japanese Patent Application No. 2006-161128 (With Partial Translation).
Matsuki Hirohisa
Nomoto Ryuji
Cruz Leslie Pilar
Fujitsu Semiconductor Limited
Tran Minh-Loan T
Westerman Hattori Daniels & Adrian LLP
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