Semiconductor device having metal thin film resistance element

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S537000, C257SE29001

Reexamination Certificate

active

07986028

ABSTRACT:
A semiconductor device, includes a lower layer side insulation film; a wiring pattern formed on the lower layer side insulation film; a base insulation film formed on the lower layer side insulation film and the wiring pattern; and a plurality of metal thin film resistance elements formed on the base insulation film; wherein a connection hole is formed in the base insulation film on the wiring pattern; the wiring pattern and the metal thin film resistance element are electrically connected in the connection hole; the metal thin film resistance element has a belt shape part arranged separately from the connection hole and a connection part continuously formed with the belt shape part and connected to the wiring pattern in the connection hole; and the connection parts of at least two of the metal thin film resistance element are formed in the single connection hole with a gap in between said connection parts.

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