Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-07-26
2011-07-26
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S537000, C257SE29001
Reexamination Certificate
active
07986028
ABSTRACT:
A semiconductor device, includes a lower layer side insulation film; a wiring pattern formed on the lower layer side insulation film; a base insulation film formed on the lower layer side insulation film and the wiring pattern; and a plurality of metal thin film resistance elements formed on the base insulation film; wherein a connection hole is formed in the base insulation film on the wiring pattern; the wiring pattern and the metal thin film resistance element are electrically connected in the connection hole; the metal thin film resistance element has a belt shape part arranged separately from the connection hole and a connection part continuously formed with the belt shape part and connected to the wiring pattern in the connection hole; and the connection parts of at least two of the metal thin film resistance element are formed in the single connection hole with a gap in between said connection parts.
REFERENCES:
patent: 5905307 (1999-05-01), Onoda
patent: 6013940 (2000-01-01), Harada et al.
patent: 2005/0212085 (2005-09-01), Hashimoto et al.
patent: 2005/0218478 (2005-10-01), Watanabe
patent: 2005/0230833 (2005-10-01), Kato et al.
patent: 2005/0236676 (2005-10-01), Ueno
patent: 0698923 (1996-02-01), None
patent: 0741410 (1996-11-01), None
patent: 63-40344 (1988-02-01), None
patent: 6-188371 (1994-07-01), None
patent: 10-78826 (1998-03-01), None
patent: 2000-150782 (2000-05-01), None
patent: 2000-208703 (2000-07-01), None
patent: 2002-124639 (2002-04-01), None
patent: 2003-37179 (2003-02-01), None
patent: 2003-243513 (2003-08-01), None
patent: 2003-303888 (2003-10-01), None
Hashimoto Yasunori
Yamashita Kimihiko
Cooper & Dunham LLP
Jiang Fang-Xing
Ricoh & Company, Ltd.
Warren Matthew E
LandOfFree
Semiconductor device having metal thin film resistance element does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having metal thin film resistance element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having metal thin film resistance element will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2650428