Thin film field effect transistor with amorphous oxide...

Details Thin film field effect transistor with amorphous oxide... Thin film field effect transistor with amorphous oxide...

2011-07-19

2011-07-19

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257SE29068

Reexamination Certificate

active

07982216

ABSTRACT:
A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a carrier concentration of the active layer is 3×1017cm−3or more and a film thickness of the active layer is 0.5 nm or more and less than 10 nm. A TFT is provided which has a low OFF current and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided.

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