Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-08-02
2011-08-02
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29184, C438S305000
Reexamination Certificate
active
07989843
ABSTRACT:
A method produces a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semiconductor substrate to a temperature capable of epitaxial growth, vapor depositing a second or third or subsequent dopants above the semiconductor substrate where the first dopant has been deposited, then epitaxially growing a semiconductor crystal layer over the semiconductor substrate, subsequently forming a superimposed doping layer composed of the first, second, or the third or subsequent dopants in the semiconductor substrate, and applying an annealing treatment to the superimposed doping layer at a high temperature, thereby activating the plurality of dopants electrically or optically. Superimposed doping of a plurality kinds of elements as dopants is performed to a predetermined depth in the case of an elemental semiconductor.
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Translation of JP2002025921A downloaded from JPO on Dec. 16, 2010.
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International Search Report mailed Nov. 6, 2007 for International Application No. PCT/JP2007/066584.
Miki Kazushi
Nittoh Kohichi
Sakamoto Kunihiro
Yagi Shuhei
Dickey Thomas L
National Institute for Materials Science
Wenderoth , Lind & Ponack, L.L.P.
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