Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-10-03
2000-05-16
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
36518529, G11C 1604
Patent
active
060645970
ABSTRACT:
In order to reduce the number of erase operations of a nonvolatile memory cell which stores a threshold voltage selected from among a plurality of threshold levels, a plurality of programming operations are implemented before an erase operation. That is, the programming operations are executed which respectively vary the threshold voltage of the memory cell to a different one of the plurality of threshold levels, or retain the previously stored threshold voltage of the memory cell. Thereafter, the memory cell is erased so as to return the voltage which is stored in the memory cell to a predetermined level, in response to all of the threshold levels having been used in the programming operations.
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Sugawara Hiroshi
Takeshima Toshio
NEC Corporation
Nelms David
Nguyen Hien
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