Solid-state image sensor and method for producing the same

Details Solid-state image sensor and method for producing the same Solid-state image sensor and method for producing the same

2011-02-08

2011-02-08

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE31127, C438S069000

Reexamination Certificate

active

07884397

ABSTRACT:
A main object of the present invention is to provide a solid-state image sensor capable of efficiently collecting a light beam when the central position of the light receiving element and the central position of the micro lens do not coincide with each other in the plan view owing to a plural pixel sharing structure. To achieve the object, the present invention provides a solid-state image sensor comprising at least: a light receiving element for receiving a subject light to convert into a light signal; a micro lens for improving the light collecting rate to the light receiving element; and a signal readout circuit for reading a light signal generated from the light receiving element, such that the central position of the light receiving element and the central position of the micro lens do not coincide with each other in the plan view for having a plural pixel sharing structure with the single signal readout circuit shared by a plurality of the light receiving elements, wherein the micro lens having the maximum film thickness position different from the central position is provided such that the focus position of the micro lens with respect to a parallel ray is on the light receiving element.

REFERENCES:
patent: 5497269 (1996-03-01), Gal
patent: 6421105 (2002-07-01), Shieh et al.
patent: 2001/0026322 (2001-10-01), Takahashi et al.
patent: 63-100879 (1988-05-01), None
patent: 2005-150492 (2005-06-01), None

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