Surface emitting laser and manufacturing method thereof

Details Surface emitting laser and manufacturing method thereof Surface emitting laser and manufacturing method thereof

Filed on

2011-04-12

Date issued

2011-04-12

Examiner

Estrada, Michelle (Department: 2823)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making device or circuit emissive of nonelectrical signal

SubSubClass

Including integrally formed optical element

Other Related Categories

C438S706000, C438S745000, C257SE21028, C257SE21134

Type

Reexamination Certificate

Status

active

Patent number

07923275

Description

ABSTRACT:
A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.

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Lin, et al, “High Temperature Continuous-Wave Operation of 1.3 and 1.55 nm VCSELs with InP/Air-Gap DBRs”, Journal of Selected Topics in Quantum Electronics, Oct./Nov. 2003, vol. 9, No. 5, pp. 1415-1421.

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