Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-05-03
2011-05-03
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S197000, C438S199000, C438S706000, C438S769000, C257SE21027, C257SE21051, C257SE21068, C257SE21077, C257SE21170, C257SE21218, C257SE21229, C257SE21267
Reexamination Certificate
active
07935638
ABSTRACT:
Methods and structures for enhancing the homogeneity in a ratio of perimeter to surface area among heterogeneous features in different substrate regions. At least one shape on the substrate includes an added edge effective to reduce a difference in the perimeter-to-surface area ratio between the features in a first substrate region and features in a second substrate region. The improved homogeneity in the perimeter-to-surface area ratio reduces variations in a thickness of a conformal layer deposited across the features in the first and second substrate regions.
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Culp James A.
Ellis-Monaghan John J.
Gambino Jeffrey P.
Peterson Kirk D.
Rankin Jed H.
International Business Machines - Corporation
Nhu David
Wood Herron & Evans LLP
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