Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-03-08
2011-03-08
Sayadian, Hrayr A (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE33062, C257SE33064, C257SE33065, C257SE33067, C257SE33068, C438S022000, C438S046000, C438S047000
Reexamination Certificate
active
07902565
ABSTRACT:
A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film.
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Katsuno, H. et al., “Semiconductor Light Emitting Device and Semiconductor Light Emitting Apparatus”, U.S. Appl. No. 12/195,718, filed Aug. 21, 2008.
Kaneko Kei
Katsuno Hiroshi
Ohba Yasuo
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Sayadian Hrayr A
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