Light emitting device with high light extraction efficiency

Details Light emitting device with high light extraction efficiency Light emitting device with high light extraction efficiency

2011-08-09

2011-08-09

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S099000

Reexamination Certificate

active

07994515

ABSTRACT:
An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode electrically is connected with the first-type semiconductor layer. The first electrode includes a first contact pad and a current induced electrode spaced apart and insulated from each other. The second electrode has an opposite polarity with respect to the first electrode. The second electrode includes a transparent conductive layer formed on and electrically connected with the second-type semiconductor layer and a metallic conductive layer formed on the transparent conductive layer and in electrical contact therewith.

REFERENCES:
patent: 7288797 (2007-10-01), Deguchi et al.
patent: 7652296 (2010-01-01), Chu
patent: 2002/0014630 (2002-02-01), Okazaki et al.

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