Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-07-19
2011-07-19
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000, C257S079000
Reexamination Certificate
active
07982218
ABSTRACT:
A TFT array substrate comprises an insulator base; a first metal layer on the insulator base, a first portion thereof forming a gate electrode of a TFT; a gate insulating layer overlying the first metal layer and the insulator base; an amorphous silicon layer and a first layer of conductive transparent material both on the gate insulating layer; a doped amorphous silicon layer positioned on the amorphous silicon layer; a second metal layer on the doped amorphous silicon layer and the first layer of conductive transparent material, a first portion thereof forming source and drain electrodes of the TFT; a passivation layer on the second metal layer; and a second layer of conductive transparent material on the passivation layer, a first portion thereof forming a pixel electrode, wherein the first layer of conductive transparent material forms a portion of a common electrode of the array substrate.
REFERENCES:
patent: 5998229 (1999-12-01), Lyu et al.
patent: 6255668 (2001-07-01), Kang et al.
patent: 1773374 (2006-05-01), None
Chung Te-Chen
Liao Chia-Te
Infovision Optoelectronics (Kunshan) Co., Ltd.
Luu Chuong A.
Perkins Coie LLP
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