Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2011-07-26
2011-07-26
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
C438S690000, C438S691000, C438S692000, C216S037000, C427S198000
Reexamination Certificate
active
07985681
ABSTRACT:
A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain.
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Madsen Jeremy
Zhu Hongbin
Angadi Maki A
Deo Duy-Vu N
Micro)n Technology, Inc.
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