Method for manufacturing a microlens substrate and method...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S069000, C438S070000, C257SE31127

Reexamination Certificate

active

07879630

ABSTRACT:
Disclosed herein is a method for manufacturing a microlens substrate which is excellent in chemical resistance and light fastness to intense light irradiation, and is capable of forming a microlens substrate of a high accuracy of form. The method includes the steps of: forming a lens-shaped curve at a surface side of a transparent substrate; forming an inorganic material film on the transparent substrate so as to bury the curve therewith; and planarizing the surface of the inorganic material film to provide a microlens where the curve is buried with the inorganic material film.

REFERENCES:
patent: 5513289 (1996-04-01), Hosokawa et al.
patent: 5734190 (1998-03-01), Hawkins
patent: 04-036701 (1992-02-01), None
patent: 07-191209 (1995-07-01), None
patent: 2001-092365 (2001-04-01), None
Japanese Office Action issued on Nov. 11, 2007 in connections with Japanese Patent Application No. JP 2003-045297.

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