Porous semiconductor layer formation material

Details Porous semiconductor layer formation material Porous semiconductor layer formation material

2011-03-22

2011-03-22

Tarazano, D. Lawrence (Department: 1786)

Stock material or miscellaneous articles

Composite

Of inorganic material

C313S504000, C544S165000

Reexamination Certificate

active

07910226

ABSTRACT:
The object of the present invention is to provide a semiconductor layer formation material from which a semiconductor layer having a high carrier transport ability can be made, a method of forming a semiconductor element having a semiconductor layer having a high carrier transport ability, a semiconductor element formed by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability. The semiconductor layer formation material includes a semiconductor material, porous particles each having a number of pores, and a dispersion medium, wherein the semiconductor material is existed in the semiconductor layer formation material in such a state that at least a part of the semiconductor material is filled in the pores of the porous particles. According to the semiconductor layer formation material it is possible to form a semiconductor layer having a high carrier transport ability can be made.

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