Semiconductor laser

Details Semiconductor laser Semiconductor laser

2011-08-09

2011-08-09

Stultz, Jessica T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S020000, C372S046010, C372S096000

Reexamination Certificate

active

07995635

ABSTRACT:
A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a gain region provided between the first facet and the reflective region. The reflective region has a plurality of reflection peak wavelengths that periodically vary at a predetermined wavelength interval. The first facet and the reflective region constitute a laser cavity. Furthermore, the gain region includes an active layer where light is generated, a diffraction grating layer having a diffraction grating whose grating pitch varies in a light propagation direction, a refractive-index control layer provided between the active layer and the diffraction grating layer, a first electrode for injecting current into the active layer, and a plurality of second electrodes arranged in the light propagation direction to inject current into the refractive-index control layer.

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patent: 03/012936 (2003-02-01), None
Yukiya A. Akulova et al., “Widely Tunable Electroabsorption-Modulated Sampled-Grating DBR Laser Transmitter”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, No. 6, pp. 1349-1357 (2002).
Yuliya A. Akulova et al., “Widely Tunable Electroabsorption-Modulated Sampled-Grating DBR Laser Transmitter”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, No. 6, pp. 1349-1357 (2002).

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