Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2011-01-25
2011-01-25
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257SE29166
Reexamination Certificate
active
07875941
ABSTRACT:
A method of manufacturing a miniature electromechanical system (MEMS) device includes the steps of forming a moving member on a first substrate such that a first sacrificial layer is disposed between the moving member and the substrate, encapsulating the moving member, including the first sacrificial layer, with a second sacrificial layer, coating the encapsulating second sacrificial layer with a first film formed of a material that establishes an hermetic seal with the substrate, and removing the first and second sacrificial layers.
REFERENCES:
patent: 5619061 (1997-04-01), Goldsmith et al.
patent: 6696369 (2004-02-01), Fraser et al.
patent: 6734513 (2004-05-01), Seki et al.
patent: 6734550 (2004-05-01), Martin et al.
patent: 6743654 (2004-06-01), Coffa et al.
patent: 6803843 (2004-10-01), Kato et al.
patent: 6811714 (2004-11-01), Gorrell et al.
patent: 6876482 (2005-04-01), DeReus
patent: 6883977 (2005-04-01), Dautartas et al.
patent: 6888189 (2005-05-01), Matsushita et al.
Ha Nathan W
Northrop Grumman Corporation
Rothwell Figg Ernst & Manbeck P.C.
LandOfFree
Thin film encapsulation of MEMS devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film encapsulation of MEMS devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film encapsulation of MEMS devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2637956