Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-04-19
2011-04-19
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S700000, C438S733000, C257SE21233
Reexamination Certificate
active
07927966
ABSTRACT:
The invention relates to a method of manufacturing openings in a substrate (5), the method comprising steps of: providing the substrate (5) with a masking layer (40) on a surface thereof; forming a first opening (10), a second opening (30), and a channel (20) in between the first opening (10) and the second opening (30) in the masking layer (40), the channel (20) connecting the first opening (10) with the second opening (30), the second opening (30) having an area (A2) that is larger than the area (A1) of the first opening (10); forming trenches (11, 21, 31) in the substrate (5) located at the first opening (10), the second opening (30), and at the channel (20) under masking of the masking layer (40) by means of anisotropic dry etching, and sealing off the trench (21) located at the channel (20) for forming the openings in the substrate (5). The method of the invention enables formation of a deeper first opening (10) than what is possible with the known methods. The invention further relates to a method of manufacturing a via in a substrate (5), which may be advantageously used in 3-dimensional integrated circuits.
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Wolf, S., et al; “Silicon Processing for the VLSI ERA, Process Technology”, vol. 1, p. 185, 1980.
Bennebroek Martinus T.
Nguyen Hoang Viet
Fourson George
NXP B.V.
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