Mask pattern correction and layout method

Details Mask pattern correction and layout method Mask pattern correction and layout method

2011-05-17

2011-05-17

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C716S053000, C716S055000

Reexamination Certificate

active

07943274

ABSTRACT:
A mask pattern correction method is provided. The method comprises the following steps. An original layout, which has a plurality of device patterns, is provided. Then, a simulation process is performed on the device patterns to correspondingly form a plurality of simulated patterns. Thereafter, the simulated patterns are analyzed to select a plurality of unsaturated patterns from the simulated patterns. Finally, the device patterns in the original layout corresponding to the unsaturated patterns respectively are rotated.

REFERENCES:
patent: 6622297 (2003-09-01), Uno et al.
patent: 2002/0151140 (2002-10-01), Nakasugi
patent: 2005/0166112 (2005-07-01), Okada et al.
patent: 2006/0057475 (2006-03-01), Liebmann et al.
patent: 2006/0078805 (2006-04-01), Hansen

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