Fabrication method of semiconductor circuit device

Details Fabrication method of semiconductor circuit device Fabrication method of semiconductor circuit device

2011-06-28

2011-06-28

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C438S460000

Reexamination Certificate

active

07968428

ABSTRACT:
When a semiconductor wafer is formed to be thin, steps need to be taken to prevent warping of the wafer. For this purpose, a protective tape is affixed to a surface of the semiconductor wafer, and a back side of the semiconductor wafer is then ground to a predetermined thickness. A die bonding film is affixed to the back side of the semiconductor wafer, and a dicing tape is affixed on the die bonding film. The dicing tape that is affixed to the semiconductor wafer is held by a holding jig. The protective tape is peeled off from the wafer surface and the die bonding film is heated to improve the adherence between the semiconductor wafer and the die bonding film. The semiconductor wafer is subjected to dicing for separation into individual semiconductor chips. The semiconductor chips are then die-bonded in a predetermined number onto a wiring substrate to fabricate a semiconductor device.

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