Capacitor electrode that contains oxygen and nitrogen

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S769000, C257SE29143, C257SE29343

Reexamination Certificate

active

07872328

ABSTRACT:
A capacitor electrode includes a first surface and a second surface which are arranged opposite each other. The capacitor electrode contains an oxygen atom and a nitrogen atom. The capacitor electrode includes a position A where the oxygen atom exhibits a largest concentration value, between the first surface and the second surface in a thickness direction. The nitrogen atom is present only in an area closer to the first surface than the position A.

REFERENCES:
patent: 5520992 (1996-05-01), Douglas et al.
patent: 6833576 (2004-12-01), Agarwal et al.
C.M. Chu et al., Cylindrical Ru / SrTi03/ Ru Capacitor Technology for 0.11 μm Generation DRAMs, 2001 Symposium on VLSI Technology Digest of Technical Papers.

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