Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-06-14
2011-06-14
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180
Reexamination Certificate
active
07961525
ABSTRACT:
To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.
REFERENCES:
patent: 3996657 (1976-12-01), Simko et al.
patent: 6417538 (2002-07-01), Choi
patent: 6518594 (2003-02-01), Nakajima et al.
patent: 6556475 (2003-04-01), Yamazaki et al.
patent: 6613630 (2003-09-01), Lee
patent: 6768680 (2004-07-01), Kato
patent: 6812086 (2004-11-01), Murthy et al.
patent: 6937513 (2005-08-01), Desai et al.
patent: 6982457 (2006-01-01), Bhattacharyya
patent: 6996003 (2006-02-01), Li et al.
patent: 6996011 (2006-02-01), Yeh et al.
patent: 7095656 (2006-08-01), Lee
patent: 7200049 (2007-04-01), Park et al.
patent: 7257022 (2007-08-01), Forbes
patent: 7283392 (2007-10-01), Lee
patent: 2002/0093073 (2002-07-01), Mori et al.
patent: 2004/0043638 (2004-03-01), Nansei et al.
patent: 2005/0095786 (2005-05-01), Chang et al.
patent: 2007/0132004 (2007-06-01), Yasuda et al.
patent: 2007/0228452 (2007-10-01), Asami
patent: 03-119765 (1991-05-01), None
patent: 2000-58685 (2000-02-01), None
Miyake Hiroyuki
Miyazaki Aya
Osame Mitsuaki
Yamazaki Shunpei
Lam David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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