Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2011-02-15
2011-02-15
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S499000, C257S504000, C257S544000, C257SE21598
Reexamination Certificate
active
07888768
ABSTRACT:
In one embodiment, a power integrated circuit device is provided. The power integrated circuit device includes a high-side power switch having a high voltage transistor and a low voltage transistor. The high voltage transistor has a gate, a source, and a drain, and is capable of withstanding a high voltage applied to its drain. The low voltage transistor has a gate, a source, and a drain, wherein the drain of the low voltage transistor is connected to the source of the high voltage transistor and the source of the low voltage transistor is connected to the gate of the high voltage transistor, and wherein a control signal is applied to the gate of the low voltage transistor from the power integrated circuit device. The high-side power switch is turned on when a predetermined voltage is applied to the source of the low voltage transistor, a voltage higher than the predetermined voltage is applied to the drain of the high voltage transistor, and a voltage level of the control signal becomes higher than the predetermined voltage by a threshold voltage of the low voltage transistor.
REFERENCES:
patent: 4494134 (1985-01-01), Wildi et al.
patent: 4661838 (1987-04-01), Wildi et al.
patent: 4663547 (1987-05-01), Baliga et al.
patent: 4740821 (1988-04-01), Bertotti et al.
patent: 4862242 (1989-08-01), Wildi et al.
patent: 4866495 (1989-09-01), Kinzer
patent: 4868620 (1989-09-01), Kohl et al.
patent: 4942440 (1990-07-01), Baliga et al.
patent: 4959697 (1990-09-01), Shier et al.
patent: 2002/0017683 (2002-02-01), Jeon
patent: 2005/0253218 (2005-11-01), Jeon et al.
patent: 2006/0071247 (2006-04-01), Chen et al.
patent: 2006/0163709 (2006-07-01), Anderson et al.
patent: 2008/0067560 (2008-03-01), Knaipp
Baliga, B. Jayant, Power Semiconductor Devices, Boston MA: PWS Publishing Company, 1996. pp. 357-358.
P. Friedrichs, H. Mitlehner, K. O. Dohnke, D. Peters, R. Schömer, U. Weinert, E. Baudelot, and D. Stephani, “Power devices with low on-resistance for fast switching applications”, Proceedings of the ISPSD '00. Toulouse, May 22-25, 1999. pp. 213-216.
A. Mihaila, F. Udrea, R. Azar, G. Brezeanu, and G. Amaratunga, “Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches,” Materials Science Forum, vols. 389-393 (2002) pp. 1239-1242.
Hwang Jong-tae
Jeon Chang-Ki
Kim Jong-jib
Kim Sung-lyong
Cao Phat X
Fairchild Korea Semiconductor Ltd.
Garrity Diana C
Sidley Austin LLP
LandOfFree
Power integrated circuit device having embedded high-side... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power integrated circuit device having embedded high-side..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power integrated circuit device having embedded high-side... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2629433