Sub-micron planar lightwave devices formed on an SOI optical...

Optical waveguides – Integrated optical circuit

Reexamination Certificate

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C385S129000, C385S130000

Reexamination Certificate

active

07929814

ABSTRACT:
A set of planar, two-dimensional optical devices is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change for a propagating optical signal.

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