Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-05

2011-07-05

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S760000, C438S624000, C438S626000, C438S637000, C438S652000, C438S669000, C365S192000, C365S102000, C365S145000, C235S435000

Reexamination Certificate

active

07973410

ABSTRACT:
Since a power source voltage is generated from a communication signal in a wireless chip, there is a risk that a large amount of voltage be generated in the wireless chip to electrically destroy a circuit in the case of supplying a strong communication signal. Therefore, the present invention is made with an aim to provide a wireless chip having resistance to a strong communication signal. A wireless chip of the present invention has an element in which a power source wire and a grounding wire are electrically short-circuited if a power source voltage exceeds a voltage at which an electric circuit is destroyed, i.e., exceeds the specified voltage range. Accordingly, a wireless chip of the present invention has resistance to a strong communication signal.

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Office Action (Application No. 200610064036.1) dated Dec. 4, 2009.
Chinese Office Action (Application No. 200610064036.1) Dated Nov. 18, 2010.

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