Methods and devices for improved charge management for...

Details Methods and devices for improved charge management for... Methods and devices for improved charge management for...

2011-08-09

2011-08-09

Sohn, Seung C (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S214100, C250S216000, C356S141100

Reexamination Certificate

active

07994465

ABSTRACT:
TOF and color sensing detector structures have x-axis spaced-apart y-axis extending finger-shaped gate structures with adjacent source collection regions. X-dimension structures are smaller than y-dimension structure and govern performance, characterized by high x-axis electric fields and rapid charge movement, contrasted with lower y-axis electric fields and slower charge movement. Preferably a potential barrier is implanted between adjacent gates and a bias gate is formed intermediate a gate and associated source region. For color detection sensor devices, gate bias voltage signals VA, VBcoupled to the finger-shaped gate structures are high during sub-integration periods t1and are low during a shorter charge movement period t2. In one embodiment, alternate finger-shaped gate structures preferable have different high magnitude sub-integration period voltages that enable detected ambient optical energy of different wavelengths to be discerned. Resultant detector structures can be operated at the more extreme gate voltages that are desirable for high performance.

REFERENCES:
patent: 7718948 (2010-05-01), Kiesel et al.

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