Multilevel interconnection structure having an air gap between i

Details Multilevel interconnection structure having an air gap between i Multilevel interconnection structure having an air gap between i

1998-04-17

2000-05-16

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, H01L 23485, H01L 23532

Patent

active

060641185

ABSTRACT:
A semiconductor device has an air-gap/multi-level interconnection structure. The interconnects are insulated from one another by an air gap in the same layer, and by an interlevel dielectric film between layers and from a semiconductor substrate. A high-speed semiconductor device is obtained due to a lower parasitic capacitance.

REFERENCES:
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5117276 (1992-05-01), Thomas et al.
patent: 5171713 (1992-12-01), Matthews
patent: 5391921 (1995-02-01), Kudoh et al.
patent: 5401687 (1995-03-01), Cole et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5413962 (1995-05-01), Lur et al.
patent: 5548099 (1996-08-01), Cole, Jr. et al.
patent: 5668398 (1997-09-01), Havemann et al.
patent: 5670790 (1997-09-01), Katoh et al.
patent: 5703404 (1997-12-01), Matsuura
patent: 5757072 (1998-05-01), Gorowitz et al.
patent: 5759906 (1998-06-01), Lou
patent: 5798559 (1998-08-01), Bothra et al.
patent: 5856754 (1999-01-01), Yamashita
M.B. Anand, M. Yamada and H. Shibata, "Nura: A Feasible, Gas-Dielectric Interconnect Process", Symposium on VLSI Technology Digest of Technical Papers, Jun. 11, 1996, pp. 82 and 83 XP 000639294.
Anand et al., "Nura: A Feasible, Gas-Dielectric Interconnect Process," Symposium on VLSI Technology Digest of Technical Papers, Jun. 11, 1996, pp. 82 and 83 XP 000639294.
Wolf, Silicon Processing for the VLSI Era: Vol. 2 -- Process Integration, pp. 273-275, 1990.

Affiliated with

Also associated with

Rating

Multilevel interconnection structure having an air gap between i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilevel interconnection structure having an air gap between i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilevel interconnection structure having an air gap between i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-260846