Thyristor emitter short configuration

Details Thyristor emitter short configuration Thyristor emitter short configuration

1987-05-28

1988-07-26

James, Andrew J.

357 86, H01L 2974

Patent

active

047604387

ABSTRACT:
A thyristor comprising a semiconductor body having at least four sequential layers of alternatingly opposite conductivity types. One of the layers is an emitter zone and the contiguous layer of opposite conductivity type is a base zone. A control electrode is electrically connected to the base zone and surrounded by the emitter zone. A first penetration region, including at least first and second groups of apertures in the emitter zone arranged in corresponding concentric circles of different diameters about the control electrode, permits electrical contact between the base and emitter zones. The number of apertures in each of the first and second groups is the same, and the region of the emitter zone in which the first penetration region is located is of smaller expanse than the remainder of the emitter zone. A second penetration region surrounding the first penetration region includes a plurality of apertures in the emitter zone which are arranged in a polygonal pattern to permit electrical contact between the base and emitter zones. This polygonal pattern of apertures includes transitional polygons having a portion thereof located inside of or abutting the concentric circle of the first penetration region which is most remote from the control electrode. Each of the transitional polygons has apertures only at those vertices outside the most remote concentric circle and an additional aperture within the area defined by the transitional polygon.

REFERENCES:
patent: 4150390 (1979-04-01), Jaecklin
Hartmann, IEEE Trans. on Elec. Dev., vol. ED-23, No. 8, Aug. 1976, pp. 9117, "Improvement . . . Injection".
Munoz-Yague et al, IEEE Trans. on Elec. Dev., vol. ED 23, No. 8, Aug. 1976, pp. 917-924, "Optimum Design . . . Geometry".

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