Thyristor emitter short configuration

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 86, H01L 2974

Patent

active

047604387

ABSTRACT:
A thyristor comprising a semiconductor body having at least four sequential layers of alternatingly opposite conductivity types. One of the layers is an emitter zone and the contiguous layer of opposite conductivity type is a base zone. A control electrode is electrically connected to the base zone and surrounded by the emitter zone. A first penetration region, including at least first and second groups of apertures in the emitter zone arranged in corresponding concentric circles of different diameters about the control electrode, permits electrical contact between the base and emitter zones. The number of apertures in each of the first and second groups is the same, and the region of the emitter zone in which the first penetration region is located is of smaller expanse than the remainder of the emitter zone. A second penetration region surrounding the first penetration region includes a plurality of apertures in the emitter zone which are arranged in a polygonal pattern to permit electrical contact between the base and emitter zones. This polygonal pattern of apertures includes transitional polygons having a portion thereof located inside of or abutting the concentric circle of the first penetration region which is most remote from the control electrode. Each of the transitional polygons has apertures only at those vertices outside the most remote concentric circle and an additional aperture within the area defined by the transitional polygon.

REFERENCES:
patent: 4150390 (1979-04-01), Jaecklin
Hartmann, IEEE Trans. on Elec. Dev., vol. ED-23, No. 8, Aug. 1976, pp. 9117, "Improvement . . . Injection".
Munoz-Yague et al, IEEE Trans. on Elec. Dev., vol. ED 23, No. 8, Aug. 1976, pp. 917-924, "Optimum Design . . . Geometry".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thyristor emitter short configuration does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thyristor emitter short configuration, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor emitter short configuration will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-260839

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.