Semiconductor device

Details Semiconductor device Semiconductor device

1974-12-23

1977-01-04

Larkins, William D.

357 13, 357 52, 357 53, 357 54, 357 58, H01L 2904

Patent

active

040018733

ABSTRACT:
A polycrystalline silicon film is disposed on the face of an N type silicon substrate including a termination of a PN junction to extend slightly beyond the termination of the PN junction from the periphery of the substrate. In the most preferred embodiment, the polycrystalline silicon film terminates short of both the termination of the PN junction and the periphery of the substrate and is enclosed with silicon dioxide, the silicon dioxide being also disposed at the termination of the PN junction and on the adjacent portions of the main substrate face on its both side as well as on the periphery of the main face.

REFERENCES:
patent: 3602782 (1971-08-01), Klein
Shepard, "Preventing Surface Inversion...", IBM Tech. Discl. Bull., vol. 16, No. 3, Aug. 1973, pp. 702-703.

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