Patent
1976-01-30
1977-01-04
Edlow, Martin H.
357 15, 357 90, H01L 2714
Patent
active
040018644
ABSTRACT:
There is described efficient semiconductor p-n junction solar cells which can be made from defect-rich semiconductor material. The solar cells include an extended electric field surrounding the p-n junction for extracting the photo-generated carriers in the presence of defects which would otherwise reduce the efficiency of the cell. There is also described a method of fabricating efficient semiconductor p-n junction solar cells.
REFERENCES:
patent: 3513040 (1970-05-01), Kaye
patent: 3538401 (1970-11-01), Chu
patent: 3761711 (1973-09-01), Hall
patent: 3777227 (1973-12-01), Krishna
patent: 3798079 (1974-03-01), Chu
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