Simultaneous molecular beam deposition of monocrystalline and po

Details Simultaneous molecular beam deposition of monocrystalline and po Simultaneous molecular beam deposition of monocrystalline and po

1975-08-29

1977-01-04

James, Andrew J.

357 15, 357 47, 357 49, 357 59, 357 63, H01L 2992, H01L 2948, H01L 2956, H01L 2702

Patent

active

040018580

ABSTRACT:
Described is a molecular beam technique for fabricating semiconductor devices from Group III(a)-V(a) compounds. To form planar isolated devices, an amorphous insulative layer is formed on selected portions of a monocrystalline substrate of the Group III(a)-V(a) material which is at least semi-insulating. The amorphous layer may be formed by deposition of an oxide (e.g., SiO.sub.2), anodization of an oxide (e.g., native oxides) or by conversion of a surface layer of the substrate (e.g., by grit blasting). When a molecular beam containing Group III(a) and Group V(a) elements is directed at the surface, which is preheated to a temperature in the range of 450.degree. to 675.degree. C, monocrystalline Group III(a)-V(a) material grows on the exposed substrate whereas polycrystalline Group III(a)-V(a) material is simultaneously formed on the amorphous layer. The polycrystalline and monocrystalline surfaces are substantially coplanar. The polycrystalline material has a resistivity high enough to provide electrical isolation between active devices formed in the monocrystalline material. Examples of such active devices, which are also described, include beam-leaded Schottky barrier mixer diodes which have reduced parasitic capacitance and sealed-junction Schottky barrier IMPATT diodes. To form devices in which isolation is not required, the same procedure is followed except that neither the amorphous layer nor the substrate need be made of high resistivity material.

REFERENCES:
patent: 3586925 (1971-06-01), Collard
patent: 3659334 (1972-05-01), Becke
patent: 3762945 (1973-10-01), Dilorenzo
patent: 3783050 (1974-01-01), Nanba et al.
patent: 3814997 (1974-06-01), Takahaishi
patent: 3896473 (1975-07-01), Dilorenzo et al.

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