Solid-state image sensor with groove-situated transfer elements

Details Solid-state image sensor with groove-situated transfer elements Solid-state image sensor with groove-situated transfer elements

1987-05-07

1988-07-26

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

357 24, H01J 4014, H01L 2978

Patent

active

047602732

ABSTRACT:
Grooves 8a are formed on a main surface of a semiconductor substrate 8 and a vertical charge transfer element is formed on a side wall of each groove 8a. As a result, the areas occupied by the vertical charge transfer elements on the main surface of the semiconductor substrate 8 are substantially zero, whereby the areas occupied by Schottky barrier photo sensors 1 can be increased.

REFERENCES:
patent: 3890633 (1975-06-01), Kosonocky
patent: 4156247 (1979-05-01), Hartman et al.
patent: 4581539 (1986-04-01), Kimata
patent: 4586084 (1986-04-01), Imai
patent: 4644402 (1987-02-01), Yamada
ISSCC, Feb. 13, 1985, "A 480.times.400 Element Image Sensor with a Charge Sweep Device", by Masafumi Kimata et al., pp. 100-101.
JAP. Journal of Appl. Phys., vol. 21, 1982, pp. 231-235, "Platinum Silicide Schottky-Barrier IR-CCD Image Sensors", by Masafumi Kimata et al.

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