Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
1999-03-04
2001-10-02
Metjahic, Safet (Department: 2858)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S754120, C324S754120, C348S131000, C382S141000
Reexamination Certificate
active
06297644
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to semiconductor fabrication and more particularly to a test structure for testing the accuracy at which conductive structures are formed using both visual and electronic inspection techniques.
2. Description of the Relevant Art
High yields are essential to the profitable manufacture of integrated circuits. Yield prediction, used to estimate the manufacturing yield of a new integrated circuit, is accordingly a very valuable tool in assuring that such manufacture will be economically successful.
A wafer fabrication process typically forms multiple integrated circuits upon each of several silicon wafers processed simultaneously. As the integrated circuits formed on a given silicon wafer are identical copies of a given product, the silicon wafer is sometimes referred to as a product wafer. An individual integrated circuit is also called a “chip” or a “die”. Following wafer fabrication, the die are subjected to functional testing, then separated. Fully functional die are typically packaged and sold as individual units.
In general, the yield associated with a product wafer manufactured using a particular wafer fabrication process depends upon: 1) the number of steps in the wafer fabrication process, 2) the number of defects introduced during each processing step, and 3) the vulnerability of the features formed during a given processing step to the defects introduced during the processing step.
A defect is simply a flaw caused by an imperfect manufacturing process. Only some of the defects associated with a given step are “catastrophic” defects, or defects which prevent an integrated circuit containing the defect from performing its intended function. It is well known that most defects occur during microstructure patterning steps. Photolithography is used to accomplish such patterning steps, during which light passing through a pattern on a mask transfers the pattern to a layer of a light-sensitive material deposited on the surface of a silicon wafer. The layer of the light-sensitive material is developed in a manner analogous to the developing of exposed photographic film. Exposure to light makes certain regions of the layer of light-sensitive material soluble. The developing step removes the soluble regions, forming holes in the layer of light-sensitive material. Select regions of the upper surface of the silicon wafer are exposed to an etchant or to dopant atoms through the holes during a subsequent processing step. Small particles (i.e., particulates) on the surface of the mask or on the surface of the photoresist layer, which block or diffuse light, cause imperfect pattern registrations (i.e., imperfect feature formations). Particulates may be present in the ambient air, introduced by processing personnel, suspended in liquids and gases used during processing, or generated by processing equipment. In general, the vulnerability of a particular feature to a given defect is inversely proportional to the physical dimensions of the feature. Thus the smaller the physical dimensions of a feature formed using photolithography, the greater the likelihood that a particulate of a given size will cause a catastrophic defect.
There are two basic types of defects which may occur when conductive layers are formed on an integrated circuit topography. Extra material defects (“EMDs”) may occur when the conductive structures include material extending beyond the predefined boundaries. Such material may extend to another conductive structure causing a “short” to be formed between the two conductive structures. Missing material defects (“MMDs”) may occur when a conductive structure is formed which is missing some of its conductive material. Such a defect may cause the formation of an “open” conductive structure in which the continuity of a conductive structure is broken.
EMDs and MMDs may be detected using test structures. Typically, these test structures include a number of electrically testable conductive lines. Electrical probing of these conductive lines may be used to determine the presence of shorts between two or more conductive lines or the presence of opens in a conductive line.
FIG. 1A
depicts a typical test structure used to test for EMDs. The test structure includes a first conductive comb
10
with a test pad
12
and a second conductive comb
20
with a test pad
22
. The combs are formed in close proximity to each other. If no EMDs are present, electrical probing of pads
12
and
22
will show no electrical connection (e.g., high resistance). If, however, a conductive EMD
30
having a sufficient size to bridge at least two of the conductive lines is present, as depicted in
FIG. 1B
, a short may be formed between the two conductive lines, thus allowing an electrical connection to be formed. When pads
12
and
22
are simultaneously probed an electrical connection (e.g., a low resistance) may be detected.
FIG. 2A
depicts a serpentine structure which may be used to test for MMDs in a conductive structure. The test structure includes a serpentine conductive line
40
with test pads
42
and
44
formed at both ends of the line. If no MMDs are present, electrical probing of pads
42
and
44
should show conductivity between the two pads. If, however, an MMD
50
is present, as depicted in
FIG. 2B
, sufficient material may be absent such that the connectivity of the conductive line is broken. This MMD may be detected when electrical probing of the pads reveals a decrease in conductivity between the pads.
A disadvantage of these types of test structures is that every line has to be individually probed to check for these defects. If a large number of test structures are present, the electrical testing of each of these test structures may take an undesirable length of time. It would be desirable to develop a test structure and method which can more rapidly determine the presence of defects. Such a structure and method would be beneficial in rapidly detecting the presence of unacceptable defects during a production run.
SUMMARY OF THE INVENTION
The problems outlined above are in large part solved by a test structure which includes alternating grounded and floating conductive lines. Floating conductive lines are defined to be lines which are neither grounded nor powered during the optical testing of the test structure. This test structure allows for a rapid optical inspection of the test structure to determine if defects are present. When the test structure is irradiated with electrons, conductive lines which are floating will emit more electrons than grounded conductors. This occurs because the grounded conductors absorb a portion of the electrons directed toward them, thus emitting fewer electrons than the floating conductive lines. If a defect is present which causes a short between a grounded and an ungrounded line, the two lines will emit about the same amount of electrons. During a voltage contrast inspection of the test structure, the lines may appear as an alternating series of bright (i.e., emitting more electrons) and darkened (i.e., emitting fewer electrons) conductive lines. If a defect is present on the test structure, this condition may be detected by inspecting the test structure while the structure is being irradiated with electrons. If a floating and grounded line are shorted to each other, at least a portion of the floating line in the vicinity of the defect will appear to be darkened, thus readily signaling, by visual scan, the presence of a defect.
An advantage of this test structure is that the presence and location of the defect may be readily determined. If a short occurs between a floating and a grounded line, the floating line will appear darkened in the vicinity of the short. Thus, when the region in which the defect is present is scanned, a change in the visual appearance of a conductive line will occur. This method allows not only the detection of EMDs, but also allows a rapid method of determining the location of the defect. This avoids inspecting the entire test structure. Voltag
Emami Iraj
Jarvis Richard W.
McIntyre Michael G.
Nistler John L.
Advanced Micro Devices , Inc.
Conley & Rose & Tayon P.C.
Daffer Kevin L.
Deb Anjan K
Metjahic Safet
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