Organosilicon compounds, processes for their preparation,...

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – At least one aryl ring which is part of a fused or bridged...

Reexamination Certificate

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C524S860000, C524S862000, C525S477000, C525S478000, C525S479000, C528S031000, C528S015000, C528S024000, C528S039000

Reexamination Certificate

active

06313217

ABSTRACT:

FIELD OF INVENTION
The present invention relates to organosilicon compounds, to processes for their preparation and their use in crosslinkable organopolysiloxane compositions.
BACKGROUND OF INVENTION
Organosilicon compounds consisting of tetrafunctional units (Q units) of the structure SiO
4/2
— and monofunctional units (M units) of the structure R
3
SiO
½
—, for example (Me
3
SiO)
4
Si, (Me
3
SiO)
3
SiOH, (vinyl-Me
2
SiO)
4
Si, (Me
3
SiO)
2
vinyl-SiOH and (Me
3
SiO)
2
MeSiOH are already known. The preparation of such compounds is also known, by aqueous-alkaline degradation of silica gels, precipitated or pyrogenic silicas with alkylammonium hydroxides, followed by trimethylsilylation. Reference is made, to D. Hoebbel et al., Z. anorg. allg. Chem. 424 (1976) 115.
DE-A-42 16 139 (Wacker-Chemie GmbH; published on Nov. 18, 1993) and corresponding U.S. Pat. No. 5,548,053, describe MQ resins having a ratio of M units to Q units of less than or equal to 1. These MQ resins can be used in place of hydrophobicized highly disperse silicic add as fillers in silicone rubber. DE-B 24 22 846 (Rhône-Poulenc S. A.; published on Apr. 23, 1976) and the corresponding U.S. Pat. No. 3,933,729 and U.S. Pat. No. 3,983,265 describe condensation-crosslinkable organopolysiloxane compositions which for improved adhesion comprise from 10 to 50 parts of MQ resin with a ratio of M units to Q units of less than or equal to 1.2.
SUMMARY OF INVENTION
In the present invention the term organopolysiloxanes is intended to include dimeric, oligomeric and polymeric siloxanes.
The present invention provides organosilicon compounds having 2 to 17 silicon atoms, comprising units of the formula
R
a
R
1
b
(OR
2
)
c
SiO
4−(a+b+c)/2
  (I),
where
R is identical or different and is a hydrogen atom or optionally substituted, SiC-bonded aliphatically saturated hydrocarbon radical of 1 to 18 carbon atoms, where not more than one radical R per silicon atom can have the meaning of hydrogen atom,
R
1
is identical or different and is a SiC-bonded, aliphatically unsaturated hydrocarbon radical of 2 to 18 carbon atoms,
R
2
is identical or different and is a hydrogen atom or optionally substituted hydrocarbon radical of 1 to 18 carbon atoms, which can be interrupted by oxygen atoms,
a is 0, 1, 2 or 3,
b is 0, 1, 2 or 3,
c is 0, 1, 2 or 3,
where the sum of a, b and c in formula (I) is less than or equal to 3 and at least one radical R
1
is present per molecule. The organosilicon compounds are compounds comprising units of the formula
(R
3
SiO)
d
(R
2
R
1
SiO)
e
(OH)
f
Si  (Ia),
where
d is 0, 1, 2 or 3,
e is 1, 2 or 3,
f is 0, 1 or 2 and
the sum d+e+f is equal to 4 and/or compounds of the formula
((R
3
SiO)
g
(R
2
R
1
SiO)
h
(OH)
i
Si)
2
O  (Ib),
where
g is identical or different and is 0, 1, 2 or 3,
h is identical or different and is 0, 1, 2 or 3,
i is identical or different and is 0, 1 or 2, and
the sum g+h+i is equal to 3 at every silicon atom, and at least one radical R
1
is present per molecule.
Radical R is a hydrogen atom and hydrocarbon radicals of 1 to 8 carbon atoms, preferably the methyl radical.
Examples of hydrocarbon radicals R are alkyl radicals, such as the methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-pentyl, isopentyl, neopentyl, tert-pentyl radical, hexyl radicals, such as the n-hexyl radical, heptyl radicals, such as the n-heptyl radical, octyl radicals, such as the n-octyl radical and isooctyl radicals, such as the 2,2,4-trimethylpentyl radical, nonyl radicals, such as the n-nonyl radical, decyl radicals, such as the n-decyl radical, dodecyl radicals, such as the n-dodecyl radical, octadecyl radicals, such as the n-octadecyl radical; cycloalkyl radicals, such as cyclopentyl, cyclohexyl, cycloheptyl radicals and methylcyclohexyl radicals; aryl radicals, such as the phenyl, biphenyl, naphthyl and anthryl and phenanthryl radical; alkaryl radicals, such as o-, m-, p-tolyl radicals, xylyl radicals and ethylphenyl radicals; aralkyl radicals, such as the benzyl radical, the &agr;- and the &bgr;-phenylethyl radical.
Examples of substituted hydrocarbon radicals R are halogenated alkyl radicals, such as the 3-chloropropyl, the 3,3,3-trifluoropropyl and the perfluorohexylethyl radical, halogenated aryl radicals, such as the p-chlorophenyl and the p-chlorobenzyl radical.
Radical R
1
is alkenyl radicals of 2 to 8 carbon atoms, preferably the vinyl radical.
Examples of radicals R
1
are the vinyl, allyl, methallyl, 1-propenyl, 1-butenyl, 1-pentenyl radical, 5-hexenyl, butadienyl, hexadienyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, ethynyl, propargyl and 1-propynyl radical.
Radical R
2
is a hydrogen atom and alkyl radicals of 1 to 8 carbon atoms, preferably hydrogen atom, methyl and ethyl radical, especially hydrogen atom.
Examples of optionally substituted hydrocarbon radicals R
2
are the radicals indicated as examples of R and R
1
and alkoxyalkyl radicals, such as the methoxyethyl radical and the ethoxyethyl radical.
The organosilicon compounds according to the present invention have a M
n
molecular weight of not more than 1000 g/mol, preferably not more than 500 g/mol.
The organosilicon compounds of formula (Ia) according to the present invention are preferably (R
3
SiO)(R
2
R
1
SiO)
3
Si, (R
3
SiO)
2
(R
2
R
1
SiO)
2
Si, (R
3
SiO)
3
(R
2
R
1
SiO)Si, (R
3
SiO)(R
2
R
1
SiO)
2
SiOR
2
, (R
3
SiO)
2
(R
2
R
1
SiO)SiOR
2
and (R
2
R
1
SiO)
3
SiOR
2
, where R, R
1
and R
2
have the meaning given above.
The organosilicon compounds of formula (Ia) according to the present invention are preferably (R
3
SiO)(R
2
R
1
SiO)
3
Si and (R
2
R
1
SiO)
3
SiOR
2
, where R, R
1
and R
2
have the meaning given above.
Examples of the organosilicon compounds of formula (Ia) according to the present invention are (Me
3
SiO)(Me
2
ViSiO)
3
Si, Me
3
SiO)
2
(Me
2
ViSiO)
2
Si, (Me
3
SiO)
3
(Me
2
ViSiO)Si, (Me
3
SiO)(Me
2
ViSiO)
2
SiOH, (MeSiO)
2
(Me
2
ViSiO)SiOH and (Me
2
ViSiO)
3
SiOH, where Me is methyl radical and Vi is vinyl radical.
The organosilicon compounds of formula (Ib) according to the present invention are preferably
(R
2
R
1
SiO)
3
Si—O—Si(R
2
R
1
SiO)
3
,
(R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
2
R
1
SiO)
3
,
(R
3
SiO)
2
(R
2
R
1
SiO)Si—O—SiR
2
R
1
SiO)
3
,
(R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
3
SiO)(R
2
R
1
SiO)
2
,
(R
2
R
1
SiO)
3
Si—O—Si(R
3
SiO)
3
,
(R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
3
SiO)
2
(R
2
R
1
SiO),
(R
3
SiO)
3
Si—O—Si(R
3
SiO)(R
2
R
1
SiO)
2
,
(R
3
SiO)
2
(R
2
R
1
SiO)Si—O—Si(R
3
SiO)
2
(R
2
R
1
SiO),
(R
3
SiO)
3
Si—O—Si(R
3
SiO)
2
(R
2
R
1
SiO),
(R
2
R
1
SiO)
3
Si—O—Si(R
2
R
1
SiO)
2
(OR
2
),
(R
2
R
1
SiO)
3
Si—O—Si(R
2
R
1
SiO)(OR
2
)(R
3
SiO),
(R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
2
R
1
SiO)
2
(OR
2
),
(R
2
R
1
SiO)
3
Si—O—Si(OR
2
)(R
3
SiO)
2
,
(R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
3
SiO)(R
2
R
1
SiO)(OR
2
),
(R
3
SiO)
2
(R
2
R
1
SiO)Si—O—Si(R
2
R
1
SiO)
2
(OR
2
),
(R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
3
SiO)
2
(OR
2
),
(R
2
R
1
SiO)
2
(OR
2
)Si—O—Si(R
3
SiO)
3
,
(R
3
SiO)
2
(R
2
R
1
SiO)Si—O—Si(R
3
SiO)(R
2
R
1
SiO)(OR
2
),
(R
3
SiO)
2
(R
2
R
1
SiO)Si—O—Si(R
3
SiO)
2
(OR
2
) and
(R
3
SiO)
3
Si—O—Si(R
3
SiO)(OR
2
)(R
2
R
1
SiO),
where R, R
1
and R
2
have the meaning given above.
The organosilicon compounds of formula (Ib) according to the present invention are preferably (R
2
R
1
SiO)
3
Si—O—Si(R
2
R
1
SiO)
3
, (R
3
SiO)(R
2
R
1
SiO)
2
Si—O—Si(R
2
R
1
SiO)
3
and (R
2
R
1
SiO)
3
Si—O—Si(R
2
R
1
SiO)
2
(OR
2
), where R, R
1
and R
2
have the meaning given above.
More particular examples of the organosilicon compounds of formula (Ib) according to the present invention are
(Me
2
ViSiO)
3
Si—O—Si(Me
2
ViSiO)
3
,
(Me
3
SiO)(Me
2
ViSiO)
2
Si—O—Si(Me
2
ViSiO)
3
,
(Me
3
SiO)
2
(Me
2
ViSiO)Si—O—Si(Me
2
ViSiO)
3
,
(Me
3
SiO)(Me
2
ViSiO)
2
Si—O—Si(Me
3
SiO)(Me
2
ViSiO)
2
,
(Me
3
SiO)
3
Si—O—Si(Me
2
ViSiO)
3
,
(Me
3
SiO)
2
(Me
2
ViSiO)Si—O—Si(Me
3
SiO)(Me
2
ViSiO)
2
,
(Me
3
SiO)
3
Si—O—Si(Me
3
SiO)(Me
2
ViSiO)
2
,
(Me
3
SiO)
2
(Me
2
ViSiO)Si—O—Si(Me
3
SiO)
2
(Me
2
ViSiO),
(Me
3
SiO)
3
Si—O—Si(Me
3
SiO)
2
(Me
2
ViSiO),
(Me
2
ViSiO)
3
Si—O—

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