Semiconductor laser array including lasers with reflecting means

Details Semiconductor laser array including lasers with reflecting means Semiconductor laser array including lasers with reflecting means

1989-09-26

1991-02-12

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 23, 372 45, 372 46, 372 49, 372 96, 372 97, 372102, H01S 319

Patent

active

049930362

ABSTRACT:
Disclosed is a semiconductor laser array including a plurality of semiconductor lasers each having an active layer having a quantum well structure with at least two quantum levels. The semiconductor lasers have reflecting means having different wavelength selection properties.

REFERENCES:
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patent: 4740978 (1988-04-01), Gobel et al.
patent: 4813054 (1989-03-01), Plumb
patent: 4817110 (1989-03-01), Tokuda et al.
patent: 4887255 (1989-12-01), Handa et al.
patent: 4896328 (1990-01-01), Sekiguchi
Applied Physics Letters, vol. 51, No. 21, Nov. 23, 1987, pp. 1664-1666, Tokuda, Y., et al., "Dual-Wavelength Emission from a Twin-Stripe Single Quantron Well Laser."
Electronics Letters, vol. 20, No. 11, May 1984, pp. 463-464, Hirayama, Y., et al., "Monolithic Integration of Low-Threshold-Current 1.3 .mu.m GaIn AsP/InP DfB Lasers."

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