Method for eliminating residual oxygen contaminations from cruci

Details Method for eliminating residual oxygen contaminations from cruci Method for eliminating residual oxygen contaminations from cruci

1998-09-04

2000-05-16

Picardat, Kevin M.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

438478, 438584, 438689, H01C 2176

Patent

active

06063684&

ABSTRACT:
In a method for eliminating residual oxygen contaminations from crucible-drawn silicon wafers, a number of trenches are etched into the front side of a crucible-drawn silicon wafer and that the silicon wafer is subsequently tempered at approximately 1100.degree. C. As a result of the extremely large surface area in the front side of the silicon wafer, oxygen contaminants can effectively diffuse out. After the oxygen drive-out has ensued, the trenches are filled bubble-free with epitaxially deposited silicon and the active structures are processed into the front side.

REFERENCES:
patent: 4589952 (1986-05-01), Behringer et al.
patent: 5250449 (1993-10-01), Kuroyanagi et al.
patent: 5355831 (1994-10-01), Schauer
patent: 5891776 (1999-04-01), Han et al.

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