Process for manufacture of fast recovery diodes

Details Process for manufacture of fast recovery diodes Process for manufacture of fast recovery diodes

1977-06-20

1979-02-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148190, 357 63, H01L 21225

Patent

active

041405609

ABSTRACT:
A high speed or fast recovery diode having soft turn-off characteristics has gold atoms diffused in a silicon wafer to reduce minority carrier lifetime. The gold atom density gradient is relatively high across the thickness of the wafer. A novel process is used to form the gold atom density gradient in which a shallow surface layer of phosphorus is diffused into the wafer and the shallow phosphorus diffusion is removed from one of the wafer surfaces. Gold is then plated onto the wafer and is sintered into the wafer through the phosphorus-free surface with a high gradient since gold atoms will not penetrate the wafer where the thin phosphorus coating remains.

REFERENCES:
patent: 3184347 (1965-05-01), Hoerni
patent: 3244566 (1966-04-01), Mann et al.
patent: 3356543 (1967-12-01), Desmond et al.
patent: 3486950 (1969-12-01), Lesk
patent: 3625781 (1971-12-01), Jashi et al.
patent: 3645808 (1972-02-01), Kamiyama et al.

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