Method for manufacturing MOSFET devices by ion-implantation

Details Method for manufacturing MOSFET devices by ion-implantation Method for manufacturing MOSFET devices by ion-implantation

1977-09-08

1979-02-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 23, 357 91, H01L 21265, H01L 2978

Patent

active

041405471

ABSTRACT:
A method for manufacturing an MOS FET includes a step of forming a p.sup.+ -type layer in a p-type substrate by injecting ions into the substrate through a field oxide film using a mask layer and removing the portion of the field oxide film under the mask layer.

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