Planarized selective tungsten metallization system

Details Planarized selective tungsten metallization system Planarized selective tungsten metallization system

1989-07-18

1991-10-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437190, 437192, 437195, 437200, 437201, H01L 2100, H01L 2102, H01L 2190, H01L 21283

Patent

active

050554239

ABSTRACT:
In an improved selection tungsten metallization system, a plurality of orifices (20) are cut into a first level dielectric layer (18). A nucleation layer (52), preferably Ti-W alloy, is then formed in each orifice (20) and on the outer surface of the first dielectric layer (18) in a second-level metallization pattern. A second dielectric layer (30) is deposited over the first dielectric layer (18) and the nucleation layer (52), and a reverse second level metallization pattern is used to etch slots (58) back down to the nucleation layers (52) and into orifices (20). Thereafter, tungsten is deposited by selective CVD to fill the first level orifices (20) and the second level slots (58) until the upper surfaces (62) of the tungsten conductors (60) are substantially coplanar with the upper surface (38) of the second dielectric layer (30).

REFERENCES:
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patent: 4582563 (1986-04-01), Hazuki
patent: 4624864 (1986-11-01), Hartmann
patent: 4640738 (1987-02-01), Fredericks
Moriya, T., A Planar Metallization Process--Its Application to Tri-Level Aluminum Interconnection, IEEE, IEDM 83, pp. 550-553.
Smith, G., Comparison of Two Contact Plug Techniques for Use with Planarized Oxide, Jun. 1986, V-MIC Conf.

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