Abrading – Abrading process – Glass or stone abrading
Reexamination Certificate
1999-06-03
2001-09-18
Eley, Timothy V. (Department: 3723)
Abrading
Abrading process
Glass or stone abrading
Reexamination Certificate
active
06290576
ABSTRACT:
TECHNICAL FIELD
The present invention relates to semiconductor processors, sensors, semiconductor processing systems, semiconductor workpiece processing methods, and turbidity monitoring methods.
BACKGROUND OF THE INVENTION
Numerous semiconductor processing tools are typically utilized during the fabrication of semiconductor devices. One such common semiconductor processor is a chemical-mechanical polishing (CMP) processor. A chemical-mechanical polishing processor is typically used to polish or planarize the front face or device side of a semiconductor wafer. Numerous polishing steps utilizing the chemical-mechanical polishing system can be implemented during the fabrication or processing of a single wafer.
In an exemplary chemical-mechanical polishing apparatus, a semiconductor wafer is rotated against a rotating polishing pad while an abrasive and chemically reactive solution, also referred to as a slurry, is supplied to the rotating pad. Further details of chemical-mechanical polishing are described in U.S. Pat. No. 5,755,614, incorporated herein by reference.
A number of polishing parameters affect the processing of a semiconductor wafer. Exemplary polishing parameters of a semiconductor wafer include downward pressure upon a semiconductor wafer, rotational speed of a carrier, speed of a polishing pad, flow rate of slurry, and pH of the slurry.
Slurries used for chemical-mechanical polishing may be divided into three categories including silicon polish slurries, oxide polish slurries and metals polish slurries. A silicon polish slurry is designed to polish and planarize bare silicon wafers. The silicon polish slurry can include a proportion of particles in a slurry typically with a range from 1-15 percent by weight.
An oxide polish slurry may be utilized for polishing and planarization of a dielectric layer formed upon a semiconductor wafer. Oxide polish slurries typically have a proportion of particles in the slurry within a range of 1-15 percent by weight. Conductive layers upon a semiconductor wafer may be polished and planarized using chemical-mechanical polishing and a metals polish slurry. A proportion of particles in a metals polish slurry may be within a range of 1-5 percent by weight.
It has been observed that slurries can undergo chemical changes during polishing processes. Such changes can include composition and pH, for example. Furthermore, polishing can produce stray particles from the semiconductor wafer, pad material or elsewhere. Polishing may be adversely affected once these by-products reach a sufficient concentration. Thereafter, the slurry is typically removed from the chemical-mechanical polishing processing tool.
It is important to know the status of a slurry being utilized to process semiconductor wafers inasmuch as the performance of a semiconductor processor is greatly impacted by the slurry. Such information can indicate proper times for flushing or draining the currently used slurry.
SUMMARY OF THE INVENTION
The present invention provides semiconductor processors, sensors, semiconductor processing systems, semiconductor workpiece processing methods, and turbidity monitoring methods.
According to one aspect of the invention, a semiconductor processor is provided. The semiconductor processor includes a process chamber and a supply connection configured to provide slurry to the process chamber. A sensor is provided to monitor turbidity of the slurry. One embodiment of the sensor is configured to emit electromagnetic energy towards the supply connection providing the slurry. The supply connection is one of transparent and translucent in one embodiment. The sensor includes a receiver in the described embodiment configured to receive at least some of the emitted electromagnetic energy and to generate a signal indicative of turbidity responsive to the received electromagnetic energy.
In another arrangement, plural sensors are provided to monitor the turbidity of a subject material, such as slurry, at different corresponding positions. In addition, one or more sensors can be provided to monitor turbidity of a subject material within a horizontally oriented supply connection or container, a vertically oriented supply connection or container, or supply connections or containers in other orientations.
One sensor configuration of the invention provides a source configured to emit electromagnetic energy towards the supply connection. The sensor additionally includes plural receivers. One receiver is positioned to receive electromagnetic energy passing through the subject material and configured to output a feedback signal indicative of the received electromagnetic energy. The source is configured to adjust the intensity of emitted electromagnetic energy to provide a substantially constant amount of electromagnetic energy at the receiver. Another receiver is provided to monitor the emission of electromagnetic energy from the source and provide a signal indicative of turbidity.
The invention also includes other aspects including methodical aspects and other structural aspects as described below.
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Crum Magdel
Meikle Scott G.
Moore Scott E.
Berry Jr. Willie
Eley Timothy V.
Micro)n Technology, Inc.
Wells, St. John, Roberts Gregory & Matkin P.S.
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