Novel architecture for virtual ground high-density EPROMS

Details Novel architecture for virtual ground high-density EPROMS Novel architecture for virtual ground high-density EPROMS

1989-08-07

1991-02-12

Bowler, Alyssa H.

Static information storage and retrieval

Read only systems

Semiconductive

365185, 36523004, 365 51, 36518904, G11C 700, G11C 1140, G11C 11407

Patent

active

049929801

ABSTRACT:
A virtual ground electrically programmable read-only memory device in which disturbance to neighboring cells is practically eliminated, is disclosed. In one embodiment the memory device comprises a plurality of memory cells formed in a semiconductor substrate and arranged in rows and columns so as to form an array. During read operations, pairs of adjacent cells are accessed simultaneously by grounding a single column line within the array. The two adjacent column lines--one on each side of the grounded column line--are coupled to separate read paths. Within the array, rows of cells store bits from a plurality of data bytes according to a pattern in which pairs of adjacent cells store different bits from different bytes.

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"An Asymmetrical Lightly-Doped Source (ALDS) Cell for Virtual Ground High-Density EPROMS", by K. Yoshikawa et al., IEDM, 1988, pp. 432-435.

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