Semiconductor lasers with stable higher-order modes parallel to

Details Semiconductor lasers with stable higher-order modes parallel to Semiconductor lasers with stable higher-order modes parallel to

1980-06-02

1982-07-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

043409679

ABSTRACT:
This invention is a semiconductor junction laser which operates in a transverse mode, other than the fundamental mode, parallel to the p-n junction. An undesired transverse mode parallel to the p-n junction may be suppressed by introducing a lossy region within the laser where this mode has at least one of its maxima. The zero order transverse mode parallel to the p-n junction may be suppressed in a double heterostructure stripe geometry laser by introducing an optically or electrically lossy region in the current flow path of the laser where the zero order mode has its maximum. This double heterostructure stripe geometry laser operates linearly with respect to current in the first order transverse mode parallel to the p-n junction.

REFERENCES:
patent: 3701044 (1972-10-01), Paoli et al.
patent: 3733561 (1973-05-01), Hayashi
patent: 3824133 (1974-07-01), D'Asaro et al.
patent: 3838359 (1974-09-01), Hakki et al.
patent: 3883821 (1975-05-01), Miller et al.
patent: 4122410 (1978-10-01), Kressel et al.
Yonezu et al, "New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization--A Refractive Index Guiding with Zn Doping", Japan. J. Appl. Phys. vol. 16, (1977) No. 1, pp. 209-210.

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