Compositions: coating or plastic – Coating or plastic compositions – Silicon containing other than solely as silicon dioxide or...
Reexamination Certificate
1998-12-01
2001-05-22
Brunsman, David (Department: 1755)
Compositions: coating or plastic
Coating or plastic compositions
Silicon containing other than solely as silicon dioxide or...
C106S287150, C106S243000
Reexamination Certificate
active
06235101
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a composition for film formation. More particularly, this invention relates to a composition for film formation which is capable of forming a coating film having a uniform thickness suitable for use as an interlayer dielectric in, e.g., semiconductor elements, and which is excellent in dielectric properties, storage stability, etc.
BACKGROUND OF THE INVENTION
Silica (SiO
2
) films formed by vacuum processes such as CVD have conventionally been widely used frequently as interlayer dielectrics in semiconductor elements, etc. In recent years, a coating-type insulating film comprising a hydrolyzate of a tetraalkoxysilane as a main component, which is called an SOG (spin-on-glass) film has come to be used for the purpose of forming a further uniform interlayer dielectric. Furthermore, with the increase in the degree of integration in semiconductor elements and the like, an interlayer dielectric having low dielectric constant comprising an organopolysiloxane as a main component, which is called an organic SOG film has been developed.
However, further excellent electrical insulation between conductors is required for higher degree of integration in semiconductor elements and the like. Consequently, an interlayer dielectric material attaining lower dielectric constant has come to be desired.
Under these circumstances, JP-A-6-181201 (the term “JP-A” as used therein means an “unexamined published Japanese patent application”) discloses as an interlayer dielectric material, a coating composition for forming an insulating film having lower dielectric constant. This coating composition has an object to provide an insulating film for semiconductor devices which has low water absorption and excellent crack resistance. This prior art coating composition for insulating film formation comprises as the main component an oligomer having a number-average molecular weight of 500 or higher, obtained by polycondensating an organometallic compound containing at least one element selected from titanium, zirconium, niobium, and tantalum with an organosilicon compound having at least one alkoxy group in the molecule.
The above JP-A reference discloses the use of methanol, ethanol, 2-propanol, THF, dioxane, diethylene glycol monomethyl ether acetate or the like as a reaction solvent used for the above coating fluid for insulating film formation and the use of 2-propanol, butyl acetate or the like as a solvent for dissolving the oligomer.
WO 96/00758 discloses a coating material for silica-based insulating film formation, comprising alkoxysilanes, alkoxides of metals other than silane, and an organic solvent, which is used for forming interlayer dielectrics of a multilayered wiring board. This coating material makes it possible to coat in a large thickness, and is excellent in resistance to oxygen plasma ashing.
The above WO reference discloses as examples of the organic solvent used in the above coating material for insulating film formation, monohydric alcohols such as methyl alcohol, ethyl alcohol or isopropyl alcohol, and esters of those alcohols; polyhydric alcohols such as ethylene glycol or glycerol, and ethers or esters of those alcohols; and ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone or acetylacetone.
Further, JP-A-3-20377 discloses a coating liquid for oxide film formation which is useful for surface smoothing, interlayer insulation, and other purposes in electronic parts, etc. This coating liquid for oxide film formation has an object to provide a uniform coating liquid free from formation of gelled materials and also has an object to obtain a good oxide coating film free from cracks even when curing at high temperature and treatment with an oxygen plasma are conducted. This coating liquid for oxide film formation is a liquid obtained by hydrolyzing a given silane compound and a given chelate compound in the presence of an organic solvent, and polymerizing.
This JP-A reference discloses as examples of the organic solvent used for the above composition for coating film formation, methanol, ethanol, isopropyl alcohol, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, propylene glycol monopropyl ether, dipropylene glycol monoethyl ether, ethylene glycol monomethyl ether acetate, diethylene glycol monobutyl ether acetate, ethylene glycol diacetate, N,N-dimethylacetamide, N,N-dimethylformamide, and N-methyl-2-pyrrolidone.
However, none of the conventional compositions described above can form a film having a satisfactory dielectric constant or have a well balanced combination of storage stability, adhesion to substrates, uniformity of coating film, etc.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a material for interlayer dielectric formation, which has excellent balance in uniformity in coating film, dielectric properties, storage stability, adhesion to substrates, etc., by using an organic solvent having a specific boiling point and adding specific compounds thereto.
According to one embodiment of the present invention, there is provided a composition for film formation which comprises:
(A) a hydrolyzate and/or a partial condensate of a compound represented by the following formula (1)
R
1
n
Si(OR
2
)
4-n
(1)
wherein R
1
and R
2
may be the same or different and each represent an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, and n is an integer of 1 or 2,
(B) a metal chelate compound represented by the following formula (2)
R
3
t
M(OR
4
)
s-t
(2)
wherein R
3
represents a chelating agent, M represents a metal atom, R
4
represents an alkyl group having 2 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, s represents a valence of the metal M, and t is an integer of 1 to s;
(C) an organic solvent having a boiling point of 110 to 180° C.; and
(D) &bgr;-diketone.
According to another embodiment of the present invention, there is provided a film obtained by heating the composition.
DETAILED DESCRIPTION OF THE INVENTION
Each component of the composition of the present invention will be described below.
Component (A):
In the above formula (I), examples of the alkyl group having 1 to 5 carbon atoms represented by R
1
or R
2
include methyl, ethyl, propyl and butyl, and examples of the aryl group having 6 to 20 carbon atoms represented by R
1
or R
2
include phenyl, tolyl, xylyl and naphthyl.
Specific examples of the compound represented by the formula (1) include methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, methyltri-n-butoxysilane, methyltri-sec-butoxysilane, methyltri-tert-butoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltriisopropoxysilane, ethyltri-n-butoxysilane, ethyltri-sec-butoxysilane, ethyltri-tert-butoxysilane, ethyltriphenoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltri-n-propoxysilane, n-propyltriisopropoxysilane, n-propyltri-n-butoxysilane, n-propyltri-sec-butoxysilane, n-propyltri-tert-butoxysilane, n-propyltriphenoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, isopropyltri-n-propoxysilane, isopropyltriisopropoxysilane, isopropyltri-n-butoxysilane, isopropyltri-sec-butoxysilane, isopropyltri-tert-butoxysilane, isopropyltriphenoxysilane, n-butyltrimethoxysilane, n-butyltriethoxysilane, n-butyltri-n-propoxysilane, n-butyltriisopropoxysilane, n-butyltri-n-butoxysilane, n-butyltri-sec-butoxysilane, n-butyltri-tert-butoxysilane, n-butyltriphenoxysilane, sec-butyltrimethoxysilane, sec-butylisotriethoxysilane, sec-butyltri-n-propoxysilane, sec-butyltriisopropoxysilane, sec-butyltri-n-butoxysilane, sec-butyltri-sec-butoxysilane, sec-butyltri-tert-butoxysilane, sec-butyltriphenoxysilane, t-butyltrimethoxysilane, t-butyltriethoxysilane, t-butyltri-n-propoxysilane, t-butyltriisopropoxysilane, t-butyltri-n-butoxysilane, t-butyltri-sec-butoxysilane, t-butyltri-tert-butoxys
Hakamatsuka Satoko
Kurosawa Takahiko
Matsubara Minoru
Shinoda Tomotaka
Yamada Kinji
Brunsman David
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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