Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2000-01-18
2001-01-16
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S108000, C438S460000
Reexamination Certificate
active
06174751
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a resin encapsulated semiconductor device.
Of resin encapsulated semiconductor devices which are now in widespread use, a package form called “LGA” (Land Grid Array) is known.
In this type of LGA package, bumps or protruding electrodes are respectively provided over electrode pads which exit on a semiconductor element or chip. Inner pads are provided over a substrate (body portion) comprised of an insulated board such as a printed wiring board made up of a copper-clad laminate or the like, and the protruding electrodes are connected to their corresponding inner pads.
As methods of forming such protruding electrodes, there have been widely adopted a method of effecting plating processing using gold, solder or the like in a final stage of a wafer process generally called “bump”, a method of forming balls according to an ultrasonic-combined thermo-compression system or the like, etc.
Further, a metal bonding method using high-temperature processing or a resin-based bonding method, etc. have been widely used for connecting the bumps formed in this way and the inner pads on the substrate respectively. However, there is known a case in which since portions at which the semiconductor chip, substrate and bumps are bonded to one another, are different in thermal expansion coefficient from one anther in a state in which the above way is kept intact, a bonding property might be degraded due to a thermal cycle at an operating environment.
As countermeasures against such a case, a method of charging a resin such as a liquid thermosetting epoxy resin between the semiconductor chip and the substrate has been widely used to improve product quality such as a bonding property, moisture resistance, etc.
Connecting pads printed on the back of the substrate in advance are provided as external connecting terminals [When solder balls are further connected to the connecting pads respectively, a package form called “BGA” (Ball Grid Array) is obtained, which is now widely adopted].
It is also needless to say that the inner pads and connecting pads are electrically connected to one another within the substrate by wires or interconnections and through holes or the like.
As has already been known to date, a size reduction in electronic equipment has been advanced in recent years. Therefore, there is a strong demand for a possible reduction in the outside size of a package mounted on a semiconductor chip. The present package might be generically called “CSP” [Chip Size (or Scale) Package].
It becomes also necessary to reduce the distance between an end surface of the substrate and an end surface of the semiconductor chip or make them flush with each other.
As its corresponding countermeasures, a plurality of bumps or protruding electrodes provided on individually-divided semiconductor chips are normally respectively bonded to inner pads on substrates provided in frame form singly or plurally by the aforementioned method, and a resin is charged between the substrate and each semiconductor chip.
As a method of charging the resin therebetween, a method of dropping a resin by a dispense system and filling with it by a widely known capillary phenomenon has been adopted. Described specifically, when a resin to be charged is dropped onto a substrate by a dispenser, the resin is charged into a clearance between the substrate and a semiconductor chip by the capillary phenomenon, thus leading to completion of a package form.
However, the above-described conventional method involves the following problems upon a reduction in package.
In the dispense system described above, the substrate is mostly set larger than the semiconductor chip in size by about 0.1 mm to 0.3 mm in order to improve workability thereof at the filling of the resin. As a result, the substrate is not completely coincident in size with the semiconductor chip, thus making it impossible to fully meet a demand for a size reduction in most cases. Further, processing such as cutting might be adopted after the filling of the resin to make the substrate and the semiconductor chip coincident in size with each other. However, this has led to a factor in cost-up.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a method of manufacturing a resin encapsulated semiconductor device, which is capable of solving the above-described problems, and assembling a substrate having a plurality of body portions and a wafer formed with semiconductor chips identical in number to one another at a time to thereby facilitate mass production thereof and achieve a reduction in cost and size.
According to an aspect of the present invention, for achieving the above object, there is provided a method of manufacturing a semiconductor device comprising the steps of providing a semiconductor wafer having a main surface, the semiconductor wafer including semiconductor chip regions each of which has a protruding electrode formed on the main surface of the semiconductor wafer and scribe lines surrounding the semiconductor chip regions, providing a substrate having a chip mounting surface and a back surface, the substrate including main body portions each of which corresponds to one of the semiconductor chip regions and cut lines each of which corresponds to one of the scribe lines, each of the main body portions having an inner pad formed on the chip mounting surface and a connecting pad formed on the back surface, the inner pad corresponding to the protruding electrode, each of the cut lines has a resin injecting hole extending from the chip mounting surface to the back surface, mounting the chip mounting surface of the substrate on the main surface of the semiconductor wafer so that the protruding electrodes are connected to the inner pads, respectively, and a space between the chip mounting surface of the substrate and the main surface of the semiconductor wafer is created, injecting a resin to the space between the chip mounting surface and the main surface through resin injecting holes, curing the injected resin, and cutting the substrate, the cured resin and the semiconductor wafer along the cut lines so that semiconductor devices each of which includes the semiconductor chip region of the semiconductor wafer, the cured resin and the main body portion of the substrate are provided.
Typical ones of various inventions of the present inventions have been shown in brief. However, the various inventions of the present application and specific configurations of these inventions will be understood from the following description.
REFERENCES:
patent: 5547906 (1996-08-01), Badehi
patent: 5776798 (1998-07-01), Quan et al.
patent: 5824177 (1998-10-01), Yoshihara et al.
patent: 5948233 (1999-09-01), De Samber et al.
patent: 5950070 (1999-09-01), Razon et al.
patent: 5989982 (1999-11-01), Yoshikazu
patent: 6004833 (1999-12-01), Kovats et al.
OKI Electric Industry Co., Ltd.
Picardat Kevin M.
Rabin & Champagne, P.C.
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