Copper-to-gold thermal compression gang bonding of interconnect

Details Copper-to-gold thermal compression gang bonding of interconnect Copper-to-gold thermal compression gang bonding of interconnect

1975-06-02

1977-01-04

Smith, Al Lawrence

Metal fusion bonding

Process

Plural joints

357 71, B23K 1900, H01L 21603

Patent

active

040008428

ABSTRACT:
Gang bonding structures for connecting a semiconductive device to associated circuitry includes both copper and gold portions which are heated and pressed into thermal compression bonding relation. The resultant bond comprises a solid state interdiffusion of the copper and gold portions to obtain, upon cooling thereof, a bonding interface between the copper and gold portions comprising a solid state interdiffusion of the copper and the gold. In a preferred embodiment such copper-to-gold thermal compression bonds are obtained between copper portions of gang bonding bumps on the semiconductive device and the inner ends of a copper interconnect lead structure as well as between the outer ends of the copper lead structure and gold plated inner ends of the lead frame structure of a base metal as of copper, nickel, or kovar.

REFERENCES:
patent: 3396454 (1968-08-01), Murdock et al.
patent: 3713575 (1973-01-01), Cushman
patent: 3760238 (1973-09-01), Hamer et al.
patent: 3787958 (1974-01-01), Freedman et al.
patent: 3838984 (1974-10-01), Crane et al.

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