Patent
1985-04-19
1986-12-16
Clawson, Jr., Joseph E.
357 2313, 357 38, 357 43, H01L 2978
Patent
active
046300848
ABSTRACT:
MIS-FET, including a semiconductor substrate of a given first conductivity type having first and second surfaces, at least one channel zone of a second conductivity type opposite the first conductivity type embedded on the first surface of the substrate, a source zone of the first conductivity type embedded in the channel zone, a drain zone adjoining the first surface of the substrate, a drain electrode connected to the second surface of the substrate, and insulating layer disposed on the first surface of the substrate, at least one gate electrode disposed on the insulating layer, at least one injector zone of the second conductivity type embedded in the first surface of the substrate, and a contact being connected to the at least one injector zone and connectible to a voltage supply.
REFERENCES:
patent: 3439237 (1969-04-01), Sylvan
patent: 3911463 (1975-10-01), Hull et at.
patent: 4148047 (1979-04-01), Hendrickson
patent: 4300150 (1981-11-01), Colak
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4402003 (1983-08-01), Blanchard
A. Ambroziak, "Dev. W. a New Type of Current-Volt. Char.," IEEE, J. S-S Ckts., vol. SC-6 #2, Apr. 1971, p. 87.
J. Tihany, "Funct. Integ. of PWR, MOS and Bipolar Dev.," IEEE, Int. Elect. Dev. Meet., Wash., D.C., 12-8-1980, Proc., pp. 75-78.
Clawson Jr. Joseph E.
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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