MOMOM tunnel emission transistor

Details MOMOM tunnel emission transistor MOMOM tunnel emission transistor

Filed on

1984-12-19

Date issued

1986-12-16

Examiner

Edlow, Martin H.

Other Related Categories

357 4, 357 56, H01L 4902

Type

Patent

Status

active

Patent number

046300813

Description

ABSTRACT:
An MOMOM semiconductor device (72) has a plurality of mesa stacked horizontal layers including at least one metal layer (75) having an exposed edge at a generally vertical side (86) of the mesa. An oxide layer (76) is formed on the exposed edge of the metal layer. A second metal layer (77) extends along the side of the mesa over the first oxide layer. A second oxide layer (78) is formed on the second metal layer, and a third metal layer (79) is formed on the second oxide layer. An MOMOM tunnel emission transistor is provided by emitter metal (75)--oxide (76)--base metal (77)--oxide (78)--collector metal (79).

REFERENCES:
patent: 3155886 (1964-11-01), Pankove
patent: 3331998 (1967-07-01), Zuleeg
patent: 3397446 (1968-08-01), Sharp
patent: 3493767 (1970-02-01), Cohen
patent: 4165515 (1977-12-01), Bergman
patent: 4454522 (1984-06-01), de Lozanne
patent: 4549194 (1985-10-01), Calviello

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