Light exposure pattern mask with dummy patterns and...

Details Light exposure pattern mask with dummy patterns and... Light exposure pattern mask with dummy patterns and...

1998-09-16

2001-03-06

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06197452

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a light exposure pattern mask having a dummy pattern in addition to a wiring pattern and a production method of the light exposure pattern mask.
2. Description of the Related Art
Conventionally, a light exposure pattern mask has been used to form a wiring pattern for an integrated circuit. However, there is a problem when a light exposure pattern element
51
has a width reduced to the order of 0.2 to 0.3 micrometers, as an exposure defect occurs as shown in a pattern
52
in FIG.
10
. That is, an end portion of the pattern cannot have a specified width and becomes thinner than the other part of the pattern element.
In order to prevent this defect, there is a method to provide a correction pattern element such as
53
and
54
shown in FIG.
11
A and FIG.
11
B. These correction pattern elements, in general, have a smaller width than the smallest wiring width designed.
Accordingly, inspection of the exposure pattern defects is considerably difficult.
Moreover, a correction pattern element may not be sufficient depending on the wiring pattern density, or there is a case that a short circuit is caused between adjacent pattern elements. For example, when a distance (space width) between two pattern elements is as small as 0.2 to 0.3 micrometers, the space width fluctuates during a light exposure, and there may be caused a short circuit between the two pattern elements as shown in FIG.
12
.
It is theoretically possible to determine an optimal correction pattern element size according to the pattern (wiring) density. In practice, however, calculations of the wiring density requires a considerable time and cost.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a light exposure pattern mask capable of generating a wiring pattern without causing a pattern element defect, i.e., width decrease at an end portion or a short circuit between pattern elements, and a production method of such a mask.
In order to achieve the aforementioned object, the light exposure pattern mask according to the present invention includes a wiring pattern for forming a wiring pattern of an integrated circuit apparatus and a dummy pattern for forming a dummy pattern in the vicinity of the end portions of the wiring pattern elements.
Here, the dummy pattern preferably forms a dummy pattern in the vicinity of the end portions of linear elements of the wiring pattern having a width of 0.3 micrometers or below. Moreover, it is preferable that the dummy pattern be a dot-shaped dummy pattern having an identical width as the aforementioned linear element.


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